Infineon IPD068N10N3: High-Performance 100V OptiMOS Power Transistor for Advanced Automotive and Industrial Applications
The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics has reached a new zenith with the introduction of Infineon's IPD068N10N3. This 100V N-channel power MOSFET, part of the esteemed OptiMOS™ family, is engineered to set a new benchmark for performance in the most demanding automotive and industrial environments.
At the heart of the IPD068N10N3's superiority is its exceptionally low typical on-state resistance (R DS(on)) of just 0.68 mΩ. This ultra-low resistance is a game-changer, as it directly translates to minimized conduction losses during operation. Whether managing high currents in an electric vehicle's (EV) auxiliary systems or controlling a high-power industrial motor, this MOSFET ensures that more energy is delivered to the load and less is wasted as heat. This inherent efficiency is paramount for extending battery life in electric vehicles and reducing operational costs in industrial plants.
Beyond raw efficiency, the device is specifically optimized for switching applications. Its outstanding figure-of-merit (FOM) and dynamic characteristics allow for very fast switching speeds. This capability enables systems to operate at higher frequencies, which in turn allows for the use of smaller passive components like inductors and capacitors. The result is a significant reduction in the overall size and weight of the power solution—a critical factor for space-constrained automotive modules and compact industrial drives.
Robustness and reliability are non-negotiable in the target applications. The IPD068N10N3 excels here as well, boasting a ruggedized design that is avalanche-rated. This ensures the transistor can withstand unexpected voltage spikes and harsh transients commonly encountered in 48V automotive systems and noisy industrial environments. Its qualification for AEC-Q101 compliance guarantees that it meets the stringent quality and reliability standards required for automotive electronics, making it an ideal choice for safety-critical applications like electric power steering, braking systems, and battery management.
Furthermore, its low gate charge (Q G) simplifies drive circuit design, reducing the burden on the controller IC and contributing to overall system efficiency. The combination of high performance, superior switching characteristics, and unwavering reliability makes the Infineon IPD068N10N3 a cornerstone component for engineers designing the next generation of advanced power systems.
ICGOOODFIND: The Infineon IPD068N10N3 stands out as a top-tier 100V power MOSFET that masterfully balances ultra-low losses, high switching speed, and automotive-grade ruggedness. It is an exceptional choice for designers seeking to maximize efficiency and power density in 48V automotive systems, high-performance industrial motor drives, and advanced DC-DC converters.
Keywords: OptiMOS Power Transistor, Low RDS(on), Automotive Grade (AEC-Q101), High Switching Speed, 100V MOSFET.
