Infineon IRFB4110PBF: High-Performance Power MOSFET for Demanding Switching Applications

In the realm of power electronics, the efficiency and reliability of a system are often dictated by the performance of its switching components. The Infineon IRFB4110PBF stands out as a premier power MOSFET engineered specifically to meet the rigorous demands of high-power, high-frequency switching applications. This device encapsulates a blend of robust construction and advanced semiconductor technology, making it a preferred choice for designers tackling challenging power conversion tasks.

At the core of the IRFB4110PBF is its impressive 100V drain-source voltage (VDS) rating and a continuous drain current (ID) of 104A at 100°C. This high current handling capability, combined with an exceptionally low on-state resistance (RDS(on)) of just 3.7 mΩ, ensures minimal conduction losses. This is crucial for applications where efficiency is paramount, as reduced power dissipation directly translates to less heat generation and higher overall system efficiency.

The MOSFET is built using Infineon's advanced HEXFET technology, which provides a high cell density and a low gate charge (Qg). The low gate charge facilitates very fast switching speeds, enabling operation at higher frequencies. This is a key advantage in switch-mode power supplies (SMPS), motor drives, and DC-DC converters, where faster switching allows for the use of smaller magnetic components and filters, leading to more compact and cost-effective designs.

Furthermore, the device is characterized by its avalanche ruggedness and 100% Rg tested, ensuring high reliability and consistency under stressful operating conditions, such as inductive load switching. The TO-220 package offers a proven and versatile industry-standard form factor, providing excellent thermal performance when mounted on a heatsink.

ICGOOODFIND: The Infineon IRFB4110PBF is a benchmark in high-performance power MOSFETs, offering an optimal balance of low conduction loss, fast switching speed, and proven reliability for the most demanding power conversion systems.

Keywords:

Power MOSFET

Low RDS(on)

HEXFET Technology

High Current Capability

Fast Switching Speed