Infineon IPP80N06S2-09 N-Channel MOSFET: Key Specifications and Application Circuit Design
The Infineon IPP80N06S2-09 is a state-of-the-art N-Channel power MOSFET engineered using advanced OptiMOS technology. This device is a cornerstone in modern power electronics, offering an exceptional balance of low on-state resistance and high switching performance. It is specifically designed for high-efficiency, high-power-density applications, making it a preferred choice for designers in the automotive, industrial, and consumer electronics sectors.
Key Specifications
The standout performance of the IPP80N06S2-09 is defined by its critical electrical characteristics:
Drain-Source Voltage (VDS): 80 V. This rating makes it suitable for a wide array of applications, particularly those operating from 12V or 24V bus systems, such as automotive electronics and DC motor controls.
Continuous Drain Current (ID): 80 A at a case temperature (TC) of 25°C. This high current handling capability allows it to manage significant power levels.
On-Resistance (RDS(on)): An ultra-low < 9.0 mΩ (typical at VGS = 10 V). This is arguably its most important feature, as it directly translates to minimal conduction losses and higher overall system efficiency. Reduced power dissipation also simplifies thermal management.
Gate Threshold Voltage (VGS(th)): Typically 2.5V to 4.0V. This standard threshold ensures easy drive compatibility with a wide range of logic-level controllers and gate driver ICs.
Package: Housed in a TO-220 package, which provides excellent thermal performance and is mechanically robust for through-hole mounting, facilitating easy prototyping and heat sinking.
Application Circuit Design: A DC Motor Driver Example
A common application for this MOSFET is in a half-bridge or full-bridge motor driver circuit. The following outlines key design considerations for a simple PWM-controlled DC motor driver.
Schematic Overview:
The core of the circuit involves connecting the motor between the drain of the MOSFET and the power supply (VBUS). The source is connected to ground through a small sense resistor for current monitoring. A microcontroller (MCU) generates a Pulse-Width Modulated (PWM) signal to control the motor's speed.
Critical Design Considerations:
1. Gate Driving: While the MOSFET can be turned on by a 5V MCU signal (given its VGS(th)), for optimal switching performance—especially at high PWM frequencies—a dedicated gate driver IC is highly recommended. The driver rapidly charges and discharges the MOSFET's large gate capacitance, minimizing the transition time through the linear region and thus reducing switching losses. A resistor (e.g., 10Ω) in series with the gate is essential to dampen ringing and prevent oscillations.
2. Protection:
Freewheeling Diode: An intrinsic body diode is present within the MOSFET, but it is relatively slow. For inductive loads like motors, a parallel Schottky diode should be added to handle the reverse current during switch-off more efficiently, protecting the MOSFET from voltage spikes.
Snubber Circuit: A small RC snubber network across the drain and source can help suppress any high-frequency voltage spikes caused by parasitic inductance in the circuit layout.
Overcurrent Protection: The sense resistor in the source path allows a monitoring circuit to detect excessive current and signal the MCU to shut down the PWM, safeguarding the MOSFET and the motor.
3. Thermal Management: Despite its low RDS(on), at high currents, power dissipation (I²R) becomes significant. A properly sized heatsink attached to the TO-220 package is crucial to maintain the junction temperature within safe limits, ensuring long-term reliability.
ICGOOODFIND
The Infineon IPP80N06S2-09 stands out as an ICGOODFIND for power design engineers. Its combination of a very low 9 mΩ on-resistance, high 80A current rating, and robust 80V voltage capability makes it an exceptionally efficient and reliable solution for demanding switching applications, from motor drives to power supplies and beyond.
Keywords: Power MOSFET, Low RDS(on), Motor Drive, High Efficiency, Switching Application
