Infineon IPP200N25N3 G: A High-Performance 200A, 250V Power MOSFET for Demanding Switching Applications

In the realm of high-power electronics, the efficiency and reliability of a system are fundamentally dictated by the performance of its switching components. The Infineon IPP200N25N3 G stands out as a premier solution, engineered to meet the rigorous demands of modern high-current, high-voltage switching applications. This power MOSFET sets a new benchmark by combining exceptionally low on-state resistance with superior switching performance, making it an ideal choice for designers pushing the limits of power density and efficiency.

Constructed using Infineon's advanced TrenchStop™ technology, the IPP200N25N3 G is designed to minimize conduction losses. With a maximum drain-source voltage (VDS) of 250V and a continuous drain current (ID) of 200A at 100°C, this device is capable of handling substantial power levels. Its standout feature is an ultra-low typical on-state resistance (RDS(on)) of just 2.0 mΩ, which directly translates to reduced power dissipation and higher overall system efficiency. This is particularly critical in applications like server and telecom power supplies, industrial motor drives, and high-performance welding equipment, where every watt saved contributes to cooler operation and lower operating costs.

The benefits extend beyond static performance. The MOSFET's optimized package and internal design ensure low gate charge (QG) and low reverse recovery charge (Qrr), which are paramount for achieving high switching speeds. This results in reduced switching losses, especially at higher frequencies, allowing for the design of smaller, more compact magnetic components and filters. The TO-LL package offers a compact footprint while providing a low thermal resistance path, enhancing its ability to transfer heat to a heatsink and maintain performance under continuous heavy load.

Furthermore, the device boasts high robustness and avalanche ruggedness, ensuring reliable operation even under harsh conditions and unexpected voltage spikes. This makes it a dependable cornerstone for systems where uptime and longevity are non-negotiable.

ICGOODFIND: The Infineon IPP200N25N3 G is a top-tier power MOSFET that delivers a powerful combination of high current handling, low losses, and robust reliability, making it an exceptional component for the most demanding high-power switching designs.

Keywords: Power MOSFET, Low RDS(on), TrenchStop™ Technology, High Current Switching, TO-LL Package.