Infineon IPB044N15N5ATMA1: High-Performance 150V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPB044N15N5ATMA1 stands as a testament to these goals, representing a significant advancement in power MOSFET technology. As part of Infineon's esteemed OptiMOS™ 5 150 V family, this component is engineered to deliver exceptional efficiency and power density in a wide array of demanding applications.

This MOSFET is built upon an advanced silicon technology that drastically reduces figure-of-merit metrics. A key highlight is its ultra-low typical on-state resistance (R DS(on)) of just 3.7 mΩ. This minimal resistance is crucial as it directly translates to reduced conduction losses. When combined with outstanding switching performance, it enables systems to operate at higher frequencies with significantly lower energy wasted as heat. This synergy is vital for modern switch-mode power supplies (SMPS), motor drives, and solar inverters where every percentage point of efficiency counts.

The benefits of this technology extend beyond raw performance. The reduction in power losses allows for the design of more compact systems. Designers can either use smaller heatsinks or increase the output power within the same form factor, thereby pushing the boundaries of power density. Furthermore, the high robustness of the device, characterized by its high avalanche ruggedness and excellent quality, ensures long-term operational reliability even in harsh environments.

Housed in the space-saving TO-Leadless (TOLL) package, the IPB044N15N5ATMA1 is perfectly suited for automated, high-volume assembly processes. The package's low-profile design and superior thermal characteristics make it an ideal choice for applications where board space is at a premium.

ICGOOODFIND: The Infineon IPB044N15N5ATMA1 is a superior component that sets a high benchmark for performance. Its industry-leading low R DS(on) and exceptional switching characteristics make it an ICGOODFIND for engineers focused on maximizing efficiency and power density in next-generation power conversion systems.

Keywords: OptiMOS™ 5, Ultra-low R DS(on), High Power Density, TOLL Package, High Efficiency